A 220GHz GaAs Integration Nonlinear Transmission Line Frequency Doubler Based on Resistive Planar Schottky Diodes

A 25 μ m thick GaAs monolithic integrated nonlinear transmission line 220GHz frequency doubler is designed based on planar Schottky diodes in this paper. In order to improve the output power and bandwidth, a nonlinear transmission line (TLNL) structure is used to achieve frequency multiplication. Considering the influence of the passive structure of the diodes in the terahertz band, an electromagnetic model is established to obtain accurate diode parameters. Based on the model, the 220GHz frequency doubler has a peak frequency efficiency of 10% and a maximum output power of 20mW at an input power of 200mW. In the 185GHz-237GH band, the frequency multiplier efficiency is above 5%, and the output power greater than 10mW.