Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications

This paper describes the high breakdown voltage InAlN HEMT development and the possibility of InAlN HEMT to lower frequency range, including 5G sub-6 GHz band applications. The developed InAlN barrier HEMT with GaN cap layer was successfully suppressed the gate leakage current of 1 × 10
^-4
A/mm at the gate to drain bias of -100 V. The load-pull measurement clarified the superior efficiency of the developed InAlN HEMT by 3 points, which is attributed to the sharper knee profile by utilizing higher sheet electron density of InAlN/GaN interface.