A Low Power Inductorless Wideband Low Noise Amplifier

For IoT applications in the sub-1GHz frequency range, in this paper, we proposed a novel low-noise-amplifier (LNA) structure for RF receivers. In order to achieve low power consumption with low noise figure, high voltage gain and wide input matching range, we adopt the inductorless LNA design, using a complementary source follower structure to achieve active negative feedback and provide real impedance for wideband input matching. The two-stage of the proposed LNA use an inverter-based current multiplexing structure and achieve self-biasing through a feedback resistor which reduce the complexity of the circuit design. Finally, the gain flatness is optimized by introducing an RC compensation circuit. This design is based on TSMC 180nm process and covers a frequency range of 100MHz to 1GHz. The post-simulation results show that the minimum value of NF in the required frequency band range is 2.8dB, and the maximum gain is up to 20dB (without buffer). At a supply voltage of 1.6V, the LNA core consumes approximately 3.5mA of DC current.