High Speed and Low Power SRAM Cell with Dynamic Feedback Control

CMOS technology is the most feasible semiconductor technology but it fails to perform as per expectations beyond and at 32nm technology node due to the short channel effects. Multi-gate FET technology identical to FINFET is viable replacement of MOSFETs at 32nm. Here SRAM cells based on dynamic feedback control type are designed using FINFET technology to improve their power and speed. Also a comparative study for various performance parameters like average power and delay is also presented. Thus we can conclude that FINFET technology can effectively reduce power, current of devices. So FINFET can be utilized in many electronics devices which needs low power and also by using this device components size is reduced.