Use of 4H-SiC-based Diodes as Temperature Sensors

The use of 4H-SiC junction devices as effective temperature sensors is demonstrated by measuring, elaborating and comparing the experimental IV characteristics of three different devices, namely pin and Schottky diodes and the body diode of a commercial power MOSFET. Due to the strong dependence of the I-V characteristics on temperature, the sensor performs a high sensitivity. It is shown that the correct choice of the probe current during sensing is fundamental to obtain an excellent linearity with T in the sensor response.