Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device

In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (t
_Bio
). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to 1×10
²⁰
cm
^-3
. The t
_Bio
influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher t
_Bio
. The highest sensitivity value obtained in this work was for a drain doping concentration of 1×10
²⁰
cm
^-3
and for biomaterial thickness equal or higher than 40 nm.