Enhancement of Thermo-mechanical Behavior of IGBT Modules through Engineered Threshold Voltages

In this paper, a purposely-imbalanced current density distribution in insulated-gate bipolar transistor (IGBT) chips is introduced to reduce the surface temperature inhomogeneity of standard chips technology. The idea is implemented by modifying the gate threshold voltage across the active chip area, to counteract the uneven temperature distribution of a standard IGBT chip. Coupled thermomechanical analysis realized by finite element method (FEM) is used for validating the engineered IGBT chip via comparing different layouts.