Structure and Switching Behavior Optimization of fast 4.5 kV Press-Pack Diodes

There is an increasing demand for high power high voltage diodes. The requirements are for low losses and rugged performance during even under the fastest switching conditions. This paper describes a detailed investigation to optimize the reverse recovery behavior of 4.5 kV Press-Pack diodes under different current commutation slopes up to 15 kA/μs. Controlled axial lifetime and appropriate field stop (FS) profiles were investigated in order to obtain soft recovery behavior at 10% to 200% of rated current. Phosphorus diffusion and proton implantation were used in order to discover an appropriate process for manufacturing the field stop structure. In addition, the contributions of varied lifetime adjustments at the anode side of the diode have been analyzed and explained using measurements and simulations.