A 115–185 GHz 75–115 mW High-Gain PA MMIC in 250-nm InP HBT

We report here a 250-nm InP HBT based wideband power amplifier that operates between 110-190 GHz and fully covers D-band (110-170 GHz). It utilizes 5-gain stages and 2-way on-chip power combining. The amplifier demonstrates 25.2-dB S21 mid-band gain and 68-117 mW output power between 110-190 GHz. The fractional bandwidth associated with 1-dB and 3-dB S21 gain roll-off are 35% (54-GHz) and 43% (66.5-GHz), respectively. The fractional large-signal power bandwidth associated with highest power between 110-190 GHz is 53%. Under small, medium, and large-signal operation, the PA is most efficient between 115-185 GHz - at 3-dBm input power, 73-104 mW output power (5.0-7.5
^%
PAE) is demonstrated over this frequency span. This result represents a significant increase to the state-of-the-art for a mm-wave solid-state power amplifier operating across D-band and a significant fraction of G-band in the simultaneously demonstrated metrics of high output power (by 3-4x higher), bandwidth, gain, and gain flatness.