High Robustness S-Band GaN Based LNA

A robust full-MMIC S-band Low Noise Amplifier including power limiter based on envelope detector and Cold FET power reflector is presented. The robust LNA is based on 0.25μm UMS GaN technology and exhibits high Input Power-handling up to 40W over 2-4GHz bandwidth associated to measured Recovery Time lower than 0.5μs. Furthermore, the LNA noise figure performance is lower than 2dB with more than 22dB of small signal gain. These results are promising for the next frontend radar architectures.