Gigahertz Frequency Graphene Transistor, high yield process and good stability under strain

We report a bonding free fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with different gate length (100 nm, 200 nm and 300 nm) and different channel width (12 μm, 24 μm and 50 μm) are successfully fabricated on Kapton substrate. The transistor yield is more than 80%. Our GFETs exhibit good stability with 0.5% strain applied. Our finding ensures for next application of RF circuit based on graphene transistor.