2-12 GHz High-Power GaN MMIC Switch Utilizing Stacked-FET Circuits

Broadband high-power GaN MMIC switch has been successfully developed. The switch is based on stacked-FET circuits. By employing the configuration, high-power and low-loss performances can be achieved in broadband frequency range. The design equations to minimize insertion loss while maintaining high-power handling capability have been analytically derived. To verify this methodology, an MMIC switch was fabricated at 2-12 GHz. The switch demonstrates the power handling capability of 10W and the insertion loss of 1.5dB.