Integration of NiO Layer as Hole Transport Material in Perovskite Solar Cells

A successful integration of inorganic hole transporting material (HTM) for perovskite become one of the major concerns due to the instability issue with organic HTM. Inorganic NiO films as an efficient HTM for the inverted perovskite solar cell has been deposited by electron beam vapor deposition (EBPVD) technique instated of solution process. The X-Ray diffraction (XRD) peak of as-deposited substrate corresponding to (1 1 1) and (2 0 0) plane are dominating. The non-stoichiometry (1 1 1) in NiO thin film formation at influence its charge transfer characteristics. The FESEM confirms the successful non-stoichiometric deposition of NiO on FTO glass in an elemental wt% of O
₂
(15.82) and Ni (23.62). The perovskite solar cells are fabricated in a device structure of Glass/TCO/NiO/Perovskite/PCBM/BCP/Ag. The deposited perovskite solar cells show higher power conversion efficiency (PCE) 10.80% with short circuit current density (Jsc) of 15.13 (mA cm
^-2
), open circuit voltage (Voc) of 0.967 (V), field factor (FF) of 73.83 (%) which also allows thinking of an alternative HTL other than organic HTL for realistic commercial purpose.