RF parameter extraction and S-parameter analysis of junctionless silicon nanowire transistor

In this paper, RF and S-parameters analysis of Junc-tionless Silicon Nanowire (JLSNW) Metal Oxide Semiconductor Field-effect-transistor (MOSFET) are presented. The small-signal parameters such as source to drain capacitance, transconductance and total gate input capacitance etc. are extracted and comparisons are performed with conventional silicon nanowire MOSFET parameters. A Non-quasi-static RF model is used for validation of extracted parameters through S-parameter analysis for the first time. The device is also evaluated for various RF parameters such as cut-off frequency, transport time delay and maximum oscillation frequency. The simulated and mathematically calculated values of these parameters are showing approximate similar results up to the high-frequency of f
max
.