SiGe BiCMOS Technology with Embedded Through-Silicon Vias and Interposer Fan-Out Wafer-level Packaging Platform

In this paper, the latest developments of a high performance SiGe BiCMOS technology with embedded Through-Silicon Vias and an additional Fan-out Wafer-level Packaging platform based on a silicon interposer and direct wafer bonding are demonstrated. The combination of a SiGe BiCMOS technology including heterojunction bipolar transistors with f
_max
values of ~500 GHz together with the aforementioned packaging technology modules are explained. Both SiGe BiCMOS with monolithically integrated TSVs together with interposer and a novel Al-Al wafer bonding integration technique are realized to provide high performance and low-cost packaging platforms for mm-wave and THz 2.5/3D heterogeneous integration.