Terahertz pulse emission from GaInAsBi

Quaternary GaInAsBi alloy epitaxial layers were grown on InP substrates with 6% Bi. It was found that layers were stained and had carrier lifetime in order of few picoseconds. THz emission from unbiased surface emitter and fabricated as photoconductive antenna were investigated. It was observed that THz emitters were sensitive to the wavelengths longer than 2 $\mu$m. The demonstrated spectral characteristics of THz pulses obtained when using Er-doped fibre laser for the photoexcitation were comparable with those observed in other emitters used for THz TDS systems.