Performance Optimization of InGaN Based Quantum Well Structures for Chemical Sensing

Group III-nitride quantum well (QW) structures have recently been proved as promising (bio) chemical transducers with purely optical read-out [1]. The InGaN QW structures with pure optical read-out overcome the limitations imposed by electrical devices with contacts vulnerable to aggressive chemicals and the high cost and fabrication difficulties of sophisticated lithographic and epitaxial methods [2, 3]. The (bio) chemical sensing mechanism relies on spectral shift of the quantum well photoluminescence that can be observed with varying surface modification. The spectral shift can be attributed to an externally modulated Quantum Confined Stark Effect (QCSE) caused by the adsorbed species deposited on the quantum well structure surface. Optimization of this spectral shift experimentally requires extensive time and cost that can be truly reduced by simulating the structure using Technology Computer Aided Design (TCAD) tools.