Development of Temperature-Stable RF Filters on Composite Substrates Based on a Single Crystal LiTaO3 Layer on Silicon

In this paper, we present a new generation of substrates which address the demand for versatile intermediate-to-large-band surface acoustic wave devices and provides a unique solution for temperature-stable filter with excellent spectral qualities. The Piezoelectric-On-Insulator (POI) layer structure provides a breakthrough solution for addressing modern filter challenges on an extended range of specification. An implementation example is presented for a GPS filter at 1.575 GHz exhibiting a TCF smaller than 10 ppm.K
^-1
.