New IEGT device for a klystron anode modulator switch

To replace vacuum tubes in klystron anode modulators with a semiconductor switch, we have developed a one chip IEGT (injection enhanced gate transistor) module. IEGT is a new semiconductor device which was originally invented by Toshiba. Based on the electron injection enhancement effects, IEGT has excellent characteristics, high blocking voltage capability of 4.5 kV and fast switching performance. This IEGT module is one of the most likely candidates for the semiconductor switch. For the next step, we are planning to start to develop a 100 kV IEGT switch for a klystron anode modulator.