Modeling of Heat Source inside MOSFET Under HPEMP Based on Electro-thermal Analysis

The electro-thermal coupled process inside semiconductor device under high power electromagnetic pulse (HPEMP) is an important cause which leads electronic circuits to failure. The parameters of position and structure of heat source inside a real device play key roles in the analysis of thermal failure. In this paper, the parameters of heat source inside an 180 nm n-type metal-oxide-semiconductor field-effect transistor (MOSFET) under HPEMP are analyzed by an electro-thermal coupled method. Distributions of temperature, electric field and carrier concentration inside MOSFET are analyzed quantitatively, and the position and structure parameters of heat source are derived. This analysis is useful for further failure estimating of MOSFET under HPEMP.