Ga-Sn-O thin film thermoelectric conversion devise fabricated by Mist CVD method

We fabricated a Ga-Sn-O (GTO) thin film thermoelectric conversion devise at atmospheric pressure by the Mist Chemical Vapor Deposition (Mist CVD) method and evaluated the dependence of the power factor (PF) on the composition ration of Ga:Sn. The highest PF obtained in this study was 0.0598 mW / mK
²
when Ga:Sn=1:3.5. At that time, the Seebeck coefficient was -67.9 μV/K and the conductivity was 130 S/cm.