Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial $\pmb{\beta}$ -Ga2O3 Grown by MOVPE

The influence of substrate miscut on the surface morphology and Hall mobility at optimized growth conditions of
$\beta$
-Ga
2
O
3
layers was investigated. The results demonstrate that the surface morphology and the Hall mobility are impacted by the miscut angle of
$\beta$
-Ga
2
O
3
substrates. For substrates with miscut angle of 6° and a growth rate of about 4 nm/min, a morphology with step bunches was observed and a Hall mobility of the layer of
$115\pm 10$
cm
²
/(Vs) was obtained. Using substrates with 4° miscut, step-flow growth mode and an enhancement of the Hall mobility about
$135\pm 10\ \mathrm{cm}^{2}/(\mathrm{Vs})$
was achieved.