CVD Growth of BN Thin Films using B2H6

CVD growth of BN thin films using B2H6 was investigated. BN growth was conducted at a susceptor temperature of 1360°C, pressure of 100 mbar under H2 carrier gas. Wrinkle patterns were clearly observed by atomic force microscopy. The X-ray diffraction and Raman scattering spectroscopy confirmed (002) / (004) and E2g mode of h- BN. Thickness and optical constants of h-BN were determined by fitting the variable angle spectroscopic ellipsometry spectra. The indirect bandgap of 5.61 eV was estimated from Tauc's plot.