InAs/InP QD and InGaAsP/InP QW comb lasers for $> 1$ Tb/s transmission

Two different approaches to realize C- and L-band coherent comb lasers for
$> 1\ \mathrm{Tb}/\mathrm{s}$
optical networking and for applications in DWDM networks are explored. The first approach relies on an InAs/InP quantum dot (QD) active layer stack with 7 QD layers, the second approach is based on an InGaAsP/InP quantum well (QW) active layer stack with 4 QWs. We processed buried heterostructure (BH) lasers based on these different active layers, using the same mask set and realized 50 GHz C- and L-band coherent wavelength combs with both designs.