Advanced Substrates for GaN-Based Power Devices

In this paper, we present an approach to enhance thermal dissipation of GaN on silicon high electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs). The initial silicon substrate was removed and replaced by a copper substrate using a transfer process based on polymer bonding to a temporary wafer. Electrical and thermal characterizations were performed to study the impact of the transfer. The thermal measurements showed a lower temperature for the HEMTs transferred onto a copper substrate in the case of a 1 ms pulse at 0.34 W/mm.