Interconnect Scheme for Die-to-Die and Die-to-Wafer-Level Heterogeneous Integration for High-Performance Computing

Today, microbump-based flip-chip technology is a compelling option for heterogeneous integration in microelectronic packaging. Performance as well as density (smaller form factor) requirements continue to drive smaller, microbump-based, finer pitch interconnections. This paper presents heterogeneous integration based on microbump fabrication, characterization, and integration for fine pitch die-to-die and die-to-wafer flip-chip interconnection. A variety of microbump options including indium, indium-coated gold, gold and gold-on-gold were used for bump bonding of fine pitch flip-chip structures. A series of microbumps (2.5-15µm) were fabricated using contact and non-contact photolithography on superconducting multi-chip module (S-MCM) wafers. The integration process includes various microbump combinations to reduce microbump spreading / flow during the fine-pitch assembly process. In another study, gold-ball-based interconnects were developed to convert wire bondable chips to a flip-chip process. The use of microbumps to form 10µm-pitch flip-chip interconnects and their initial electrical performance are discussed. As a case study, we have developed indium microbump technology capable of interconnecting an array of 10-to-35-µm-pitch pads to a superconducting multi-chip module (S-MCM) fabricated on 200mm silicon wafers. The S-parameters of several back-to-back microstrip and grounded coplanar waveguide (GCPW) transitions were measured and simulated in a 2.5d (planar) full-wave electromagnetic software package (Sonnet em). The flip-chip configurations showed excellent impedance matching and low insertion loss to multi-gigahertz frequencies. For example, a microstrip-to-microstrip transition using 20µm-diameter bumps with 35µm pitch in a coaxial configuration (signal bump surrounded by ground bumps) had a simulated return loss of less than -20 dB from DC to 23 GHz. By adding some compensating inductance to the transitions, this simulated response was extended to 81 GHz. Smaller bump diameter and pitch yields a much better impedance match and less reflected energy, with the 10 µm pitch and 5 µm bump versions giving near-perfect performance to 100 GHz and beyond. Flip-chipped Josephson junctions and niobium lines interrupted by indium microbumps between the superconducting integrated circuits (ICs) and the S-MCM maintained their I-V characteristics. This paper also discusses large superconducting multi-chip module (S-MCM) fabrication and bonding approaches for future technology. Various fabrication options including jumper flip-chip, stitching and laser direct writing are considered for large S-MCM fabrication.