Analysis of Very High Energy Implantation Profiles at Channeling and Non-Channeling Conditions

This paper presents SIMS data for very high energy ion implantations of arsenic (1.9-8.0 MeV), boron (2.0-5.0 MeV), and phosphorus (4.0-8.0 MeV) from Axcelis' Purion
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VXE implanter with comparison to TCAD simulation results. Arsenic is found to be highly sensitive to implant angle, requiring beam angle control better than 0.05°, and to be relatively insensitive to damage and is generally in good agreement with simulation. It is reported for the first time that the As profile for tilt/twist=1°/0° is more channeled than 0.5°/22°, indicating the significance of planar channeling for this condition even at tilt angles ≤1.0°. Boron is well described by the TCAD model except for a 2.0 MeV highly channeled implant where it underestimates the channeling. Phosphorus is found to be the most challenging to simulate with a general overestimation of the channeling tail.