Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations

Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 °C and the dose range from 1×10
¹²
to 1×10
¹³
cm
^-2
. The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.