The Influence of Periodic Ultra-thin AlN Interlayers in Multiplication Region on the GaN Avalanche Photodiode

GaN APD with periodic ultra-thin AlN interlayers in multiplication region has been proposed to obtain a high gain at constant voltage mode. The influence of the AlN interlayers on the multiplication process was numerically simulated and analyzed. The results predict that the multiplication process contains three different stages with the increase of the reverse voltage. The experimental results agree with the numerically simulation very well and a high gain of 6×10
⁴
at constant voltage mode was obtained.