The First GeSn Gate-All-Around Nanowire P-FET on the GeSnOI Substrate with Channel Length of 20 nm and Subthreshold Swing of 74 mV/decade

We realized the first germanium-tin (GeSn) gate-alI-around (GAA) p-channel field-effect-transistors (p-FETs) on a 200 mm GeSn-on-insulator (GeSnOI) substrate, achieving subthreshold swing (SS) of 74 mV/ decade for a device with channel length (LCH) of 60 nm. The GAA structure provided excellent control of short channel effects and also enabled the realization of a transistor with LCH of 20 nm with decent electrical characteristics.