Analysis of Transient Effect on Super-Steep SS PN-Body Tied SOI-FET

In this paper, transient effects of the super-steep subthreshold slope (SS) “PN-body tied (PNBT) silicon-on-insulator field-effect transistor (SOI-FET)” were investigated by using technology computer-aided design simulation. It was founded that the PNBT SOI-FET has switching delay time due to the carrier charging and discharging affected by the Shockley-Read-Hall (SRH) recombination on the Wb region (Base of Bipolar). It is a specific mechanism of the PNBT SOI-FET, which results in the delay time from OFF to ON state and the long time of the leakage current from ON to OFF state.