A D-band MMIC Amplifier with 70-nm InP PHEMT

This paper presents the design and simulation of a three-stage monolithic millimeter-wave integrated circuit (MMIC) amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage MMIC amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage MMIC amplifier demonstrates a maximum small-signal gain of 17.8 dB at 150 GHz along with a 3dB bandwidth of 90 GHz, return loss is better than 5 dB in operating frequencies, and the size is about 2.3×1.2 mm
²
.