Electron Traps at Sidewalls of Vertical n+-GaAs/n−-InGaP/p+-GaAs Diodes Detected with Deep-Level Transient Spectroscopy

Electron traps are detected from vertical n
⁺
-GaAs/n
^-
-InGaP/p
⁺
-GaAs diodes with deep-level transient spectroscopy (DLTS). Combining lock-in window (t
_w
) varying DLTS and double-correlation DLTS (DDTLS), we assign the electron traps to surface states at the sidewalls of the diodes. The methodology is introduced in the paper.