High Performance Germanium n+/p Shallow Junction for nano-Scaled n-MOSFET

In this work, we study excimer laser annealing (ELA) on phosphorus-implanted germanium with implantation energies and doses of 30 keV, 5×10
¹⁵
cm
^-2
, and 10 keV, 5×10
¹⁴
cm
^-2
, respectively. A lower specific contact resistivity of Al/n
⁺
Ge and better performance of Ge n
⁺
/p diode than that obtained by rapid thermal annealing have been fulfilled. Moreover, by a combination of low temperature pre-annealing (LTPA) and ELA, we achieved a Ge n
⁺
/p diode with a rectification ratio of about 10
⁷
and decreased phosphorus diffusion in Ge during ELA. A increased activation concentration up to 6×10
¹⁹
cm
^-3
with a high activation ratio about 85% of phosphorus have been achieved in a low ion implanted dose and energy.