Aerosol Jet Printed WSe2 Based RRAM on Kapton Suitable for Flexible Monolithic Memory Integration

In this work, we demonstrate the first fully printed WSe
₂
resistive random access memory (RRAM) fabricated using aerosol jet printing approach from few layers WSe
₂
suspended solution at room temperature on flexible kapton substrate. The printed WSe
₂
RRAM exhibits forming free, unipolar behaviour, sub 1-V switching voltage, 2 orders high resistance state (HRS)/low resistance state (LRS) ratio, and large LRS retention time > 2.5 hours. Furthermore, the WSe
₂
RRAM exhibits both volatile and non-volatile switching behaviour with a transition set current of 2 μA. In addition, the WSe
₂
RRAM retains its functionality even after flexing down to a bending-radii of 5 cm, thus showing suitability for its use as embedded memory in conformal electronics system.