Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses

This paper presents switching characteristics of Ni/HfO
_x
/p
⁺
-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfO
_x
RRAM while step-like reset process is seen from 5 nm HfO
_x
RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfO
_x
layer has potential for application in neuromorphic computing system.