Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+ -Ion Implanted Bulk-Si Substrate

We experimentally studied the Si surface orientation dependence of SiC nano-dot formation in a hot-C
⁺
-ion implanted bulk-Si substrate (C
⁺
-bulk Si), to analyze the effects of Si atom surface density on SiC nano-dot formation in Si and the photoluminescence (PL) property. We successfully demonstrated SiC dot formation even in (110) and (111) C
⁺
-bulk Si, too. SiC dot size and density of (110) C
⁺
-bulk Si is larger than those of (100) C
⁺
-bulk Si. The photoluminescence (PL) properties of C
⁺
-bulk Si strongly depend on the Si surface orientation, and the PL intensity is the minimum in (110) C
⁺
-bulk Si with lowest Si atom surface density.