Noise Characterization of InAs Based DG-HEMT Devices for RF Applications

In this paper, we report the noise performance of a 50nm gate length InAs based DG-HEMT for high frequency applications. Normally the noise is predominant at the channel/barrier interface caused by scattering of carriers thus increasing the leakage mechanism. The noise spectral density, S
_vg
, S
_vd
and S
_ig
, S
_id
as a function of V
_gs
and V
_ds
and frequency are analyzed in detail, from these values NF
_min
is also determined for double gate InAs HEMT. For 50nm DG-HEMT, NF
_min
of 1.2 dB at 710GHz with V
_gs
=0.3V and V
_ds
= 0.5 V is obtained, making it suitable for LNA design for RF applications.