A Novel Self-Regulated Potential SOI LIGBT With Low ON-State Voltage and Turn-off Loss

In this paper, a novel Self-Regulated Potential SOI-LIGBT (SRP-LIGBT) with low on-state voltage (V
_on
) and turn-off loss (E
_off
) is proposed and demonstrated by TCAD simulation. By employing two NMOS structures to regulate the potential of P body and N+ source, respectively, the proposed device can operates under latch up mode at low anode voltage and operates under saturation mode at higher anode voltage. Thus stronger conductivity modulation and more uniform carriers distribution in the drift region will be achieved, which brings the proposed device with a low V
_on
of 1.22V, showing 34.76% reduction when compared with conventional LIGBT (Con-LIGBT) at the same E
_off
. Moreover, there is no sacrifice in the complexity or cost of process.