4.5kV Insulated Gate Triggered Thyristor (IGTT) with High $di/dt$ Characteristics for Pulse Power Applications

In this work, we propose a high-voltage (HV) insulated gate triggered thyristor (IGTT) as solid-state closing switch (SSCS) for pulse power applications. The mechanism of proposed HV IGTT is analyzed by TCAD simulation. Special design with consideration of the transient 2-D effect are carried out for enhancing conductivity modulation and achieving high di/dt characteristics. With experimental measurements, the characterizations of the fabricated HV IGTT are presented. The experimental results show that the fabricated HV IGTT features blocking voltage over 4500V and performs a di/dt up to 239 kA/cm
²
/μs with peak current over 5.5kA.