Study on Chemical Mechanical Polishing of R-Plane Sapphire by Different Additives

Currently, r-plane sapphire has a high application value. Due to the hard material properties, processing is difficult. Chemical mechanical polishing (CMP) is the widely used method for sapphire surface ultra-precision machining. In order to improve the processing efficiency of the r-plane, chelating agents, catalysts(KNO
₃
), surfactants and mixed abrasives(MgO) were selected and added to the slurry to improve chemical action, and their effects on removal rate were studied. The results showed that chelating agents, catalysts, surfactants and mixed abrasives can improve the removal rate, and the addition of mixed abrasives can achieve higher removal rates.