Performance Optimization of HFOx-Based Transparent Resistance Random Access Memory

Generally, different transparent electrode materials have various effects on transparent random resistive access memory (TRRAM) devices' performance [1]. In this work, HfOx-based TRRAM devices with ITO and FTO as top electrodes are fabricated on glass substrate. The results show that all devices presented high transmittance of above 74% in the wavelength from 400nm to 700nm region. Further, better resistive switching (RS) parameters, such as high endurance DC cycles (up to 2000 cycles), lower power consumption (less than 10uA), and self-compliance behavior etc. were clearly demonstrated. Additionally, all TRRAM devices show the data retention (up to10
⁴
s at 85°C) well.