Comprehensive Investigation of Flat-band Voltage Modulation by High-K NPT for Advanced HKMG Technology

In this work, we present a comprehensive investigation of modulation capability for P-type Metal Oxide Semiconductor Capacitor (MOSCAP) by high-k nitrogen plasma treatment (NPT), including flat-band voltage (V
_FB
), equivalent oxide thickness (EOT), and gate leakage (Jg) with specified nitrogen plasma radio frequency powers. The X-ray photoelectron spectroscopy (XPS) spectrum indicates that the good characteristics of evident V
_FB
shifts, EOT increment without penalty, and Jg without significant degradation originate from high-k layer nitridation by NPT process. Moreover, high-k nitrogen plasma treatment (NPT) can effectively improve the metal gate sheet resistance and surface roughness of the high-k layer. High-k NPT has great potential of V
_T
control capability in the advanced HKMG technology.