Novel Gap Filling BARC with High Chemical Resistance

In state-of-the-art semiconductor manufacturing processes, a BARC film/process needs to meet a multitude of requirements. In particular, it should possess a good SC-1(mixture of NH
₃
/H
₂
O
₂
) resistance, because a BARC film often serves as a wet etching mask. By introducing a low molecular weight additive which has a higher adhesive strength to the TiN surface than that of a conventional BARC, we have developed a novel BARC that possesses a better gap filling property, a superior planarity, and an over 3 times higher SC-1 resistance.