A High-Performance Source-Pocket Tunnel Field-Effect Transistor

In this paper, a p-type source-pocket tunnel field-effect (SPTFET) has been fabricated. The main feature of the device is that the p-type pocket was formed at the interface between source and channel region using BF
₂
high-angle implantation. The source-pocket tunnel junction is helpful to reduce the tunneling distance and increase the tunneling probability. Compared with the TFET without source-pocket junction, the fabricated SPTFET exhibits better electrical characteristics, such as higher on-state current, larger on-off current ratio, smaller subthreshold swing and so on.