An Euler–Lagrange Equation Oriented Solution for Write Energy Minimization of STT-MRAM

In this brief, for the first time, an Euler–Lagrange equation oriented solution for minimizing the operation energy of state-of-the-art spin-transfer-torque magnetoresistance random access memory (STT-MRAM) is proposed. Utilizing the derived analytical solvable Landau–Lifshitz–Gilbert (LLG) model and Euler–Lagrange equation, a calculable method for minimizing the dynamic energy of STT-MRAM is founded. Experimentally, a write energy reduction by 30% is demonstrated in the context of a certain write error rate. This brief provides a pragmatic method for achieving high energy-efficiency and reliable STT-MRAM operations.