A GaN-based RB-MISHEMT with Schottky-MIS hybrid Drain and TUG-AlGaN Barrier Layer

In this work, a high-performance GaN-based metal-insulator-semiconductor high electron mobility transistors with decent reverse-blocking (RB) capability is proposed and investigated. By replacing the conventional Ohmic drain with a Schottky-MIS hybrid drain, a high reverse breakdown voltage (about 900 V at 1 μA/mm) has been obtained. The thin upward graded (TUG) AlGaN barrier employed to replace the conventional the fixed-Aluminum-role AlGaN barrier enables the proposed GaN-based RB-MISHEMT with a low drain offset voltage (0.60 V at 1 mA/mm) and low on-state voltage (1.80V at 100 mA/mm). These results demonstrate that the proposed GaN-based RB-MISHEMT is promising for future power applications.