Room temperature SiC wafer bonding using SAB methods

In this paper, wafer bonding of SiC accomplished at room temperature would be introduced. Homo/heterogeneous SiC bonding using three kinds of SAB methods (standard SAB, modified SAB with Si-containing Ar-beam, and modified SAB with Si sputtering layer) were investigated and compared. The related bonding mechanisms were analyzed. The results of this research demonstrated SAB is a promising method for the low temperature bonding of SiC.