A Novel Double-Gate Diffusion-Enhancement FinFET

FinFETs are widely deployed in logic circuits but meet challenges in the analog/RF applications. To address these challenges, we first propose a novel double-gate diffusion-enhancement (DE) FinFET. Simulations involved analog and RF performances are presented by using 3-D simulators. The results show that the DE structure improves the analog/RF performance by 20%-80% compared to the conventional structure. The main mechanism is the reduction of parasitic resistance and the introduction of diffusion current components. This work provides solutions to enhance the analog/RF potentials of FinFETs and further eliminates the trade-off between the RF/analog and the logic applications.