Enhanced DC and RF performance of AlGaN/GaN HEMTs on CVD-Diamond in high power CW operation

We have investigated the DC and RF performances of AlGaN/GaN HEMTs on CVD-Diamond at high power density continuous wave (CW) operating condition. About 4-times improved DC and RF performances were observed in GaN/Dia HEMTs, which was due to the lower rise in junction temperature at higher CW operating power density. This was confirmed by theoretical TCAD simulation. The improved DC and RF performance from GaN/Dia HEMTs are promising for high power density CW operating DC and RF applications.